摘要
光电探测器在成像、通信、医疗、环境监测、生物传感等领域具有重要的应用,近年来备受研究人员的关注。采用铁电薄膜材料作为光吸收层,利用铁电极化场驱动载流子定向运动,可以大幅度简化探测器的器件结构,降低探测器的制备成本。本文采用溶胶-凝胶方法在掺氟二氧化锡(FTO)衬底上制备了PbZr_(0.52)Ti_(0.48)O_(3)(PZT)铁电薄膜,并在此基础上获得了高效的自驱动紫外光探测结果。形貌、结构、电学、铁电特性测试结果显示PZT铁电薄膜表面平整、致密、缺陷浓度低、铁电特性优异(室温下,剩余极化为2Pr=35.2μC/cm^(2),矫顽电场为~10^(5)V/cm量级)。进一步构建了性能优异的Au/PZT/FTO结构自驱动光电探测器。在0 V偏压下,探测器的光响应度和比探测率分别为0.072 A/W和4.35×10^(11)Jones,光探测性能优于已报道的同类型器件的结果。本文研究结果证实了PZT铁电薄膜基自驱动紫外光电探测器的优越性,并为将来研制器件结构简单、性能优异的自驱动光电探测器提供了一定的借鉴。
In recent years,photodetectors have been an important research subject due to their potential applications in imaging,communication,medical analysis,environmental monitoring,and biological sensing.Employing the ferroelectric materials featured with typical ferroelectric polarization as absorbers will simplify the device structure and lower the cost.In the current work,self-powered ultraviolet photodetectors have been fabricated based on ferroelectric PbZr_(0.52)Ti_(0.48)O_(3)(PZT)thin films.The ferroelectric PZT thin films were prepared using a sol-gel method.Morphological,structural,electrical,and ferroelectric characterizations showed that the as-grown ferroelectric PZT thin films possessed a smooth and dense surface,low density,high remnant polarization(2Pr=35.2μC/cm^(2))and coercive electric field(~10^(5) V/cm).On this basis,high-performance self-powered ultraviolet photodetectors with Au/PZT/FTO structure have been fabricated.Interestingly,under the bias voltage of 0 V,the responsivity and detectivity are as high as 0.072 A/W and 4.35×10^(11) Jones,respectively,which are higher than most of state-of-the-art reported results.The results shown in this paper highlight the superiorities of ferroelectric PZT-based self-powered ultraviolet photodetectors and provide a promising strategy for the development of high-performance self-powered photodetectors with simple device structures in future.
作者
叶昊熙
苏嘉韵
钟日健
蔡静
YE Haoxi;SU Jiayun;ZHONG Rijian;CAI Jing(School of Physics and Optoelectronic Engineering,Foshan University,Foshan 528000,China;Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,Foshan University,Foshan 528000,China)
出处
《发光学报》
EI
CAS
CSCD
北大核心
2023年第4期685-693,共9页
Chinese Journal of Luminescence
基金
粤港澳智能微纳光电技术联合实验室研究基金(2020B1212030010)。