一种基于电化学蚀刻钽电解电容器箔提高电容的制备方法

Preparation Method for Improving Capacitance Based on Electrochemical Etching Tantalum Electrolytic Capacitor Foil

钽电解电容器具有较高的电容密度和超高的可靠性,因此被广泛应用于各高精尖领域。然而传统钽电解电容器阳极是利用钽粉烧结工艺制作而成,这种制备工艺存在形成的孔洞无序不均匀,烧结难度大等缺点,使得内部孔洞小,阴极材料难以渗入,无法实现大电容量和耐高电压。本文针对以上问题,提出一种新型的制备方法。实验研究了脉冲直流电源蚀刻钽电解电容器箔的方法,获得了较高的表面积放大效果。系统研究了电解液组成和电源参数对钽箔蚀刻的影响,并筛选出最佳实验条件。在最佳条件下,90 V化成后,比电容达59.54 nF/mm2,较光箔电容量提高了3.2倍。该方法能够有效提高钽电解电容器的比电容量,在高电压化成下达到较高。

Tantalum electrolytic capacitors have high capacitance density and ultra-high reliability,so they are widely used in various high-precision fields.However,the anode of the traditional tantalum electrolytic capacitor is made by using the tantalum powder sintering process,which has the disadvantages of disorderly and uneven holes and difficulty in sintering,which makes the internal holes small,the cathode material is difficult to penetrate,and large capacitance and high voltage resistance cannot be achieved.In view of the above problems,a new preparation method is proposed.The method of etching tantalum electrolytic capacitor foil by pulsed DC power supply was experimentally studied,and a high surface area amplification effect was obtained.The effects of electrolyte composition and power parameters on tantalum foil etching were systematically studied,and the optimal experimental conditions were screened.Under optimal conditions,after 90 V formation,the specific capacitance reaches 59.54 nF/mm2,which is 3.2 times higher than the optical foil capacitance.This method can effectively improve the specific capacitance of tantalum electrolytic capacitors,and achieve higher under high voltage formation.