一种温控VO_(2)射频开关及其特性研究

Study on a Temperature-controllable VO_(2)RF Switch and Its Characteristics

文中提出了一种温控二氧化钒(Vanadium Dioxide,VO_(2))射频开关,在共面波导传输线上验证了其温度控制的开关特性。采用直流磁控溅射工艺在蓝宝石基底上形成70 nm厚的VO_(2)薄膜,并将其切成可独立控制的VO_(2)单元。将VO_(2)单元镶嵌在共面波导传输线中,通过改变外加温度来控制VO_(2)开关的电阻率,使其在高阻态和低阻态间切换,从而实现传输线的状态在“导通”和“关断”间切换。对由这种VO_(2)射频开关构成的器件进行了仿真设计和实验测试,仿真和测试结果吻合较好。温控VO_(2)开关具有低温截止射频信号、高温导通射频信号的特性,为可调微波器件的实现提供了新思路。

This paper presents a temperature-controllable vanadium dioxide(VO_(2))radio frequency(RF)switch,the switching characteristics of its temperature control are verified on the coplanar waveguide transmission line.A 70 nm thick VO_(2)film is formed on the sapphire substrate by DC magnetron sputtering process,and it is cut into independently controllable VO_(2)units.The VO_(2)units are embedded in the coplanar waveguide transmission line,and the resistance of VO_(2)switch is controlled by changing the applied temperature to switch between high resistance state and low resistance state,so as to switch the state of the transmission line between“on”and“off”.The simulation design and experimental measurement of the device constructed by this VO_(2)RF switch are carried out,and the simulation and measurement results are in good agreement.Temperature-controllable VO_(2)switch has the characteristics of low-temperature cut-off RF signal and high-temperature conduction RF signal,which provides a new idea for the realization of adjustable microwave devices.