4H(6H)-SiC表面重构的STM/STS研究

STM/STS Study of 4H(6H)-SiC Surface Reconstructions

半导体碳化硅由于具有宽的带隙,高的导热系数以及大的电子迁移率等优点,使其成为一种在高温、高频、大功率电子器件中具有应用前景的材料。碳化硅器件的性能受表面和界面质量的影响。在高温条件下退火碳化硅表面的重构,形貌也会发生变化,导致与金属或其他材料接触的表面结构不同。因此,碳化硅器件会受到表面重构和形貌的影响。扫描隧道显微镜/扫描隧道谱(STM/STS)是一种可以在实空间获得表面重构的形貌信息以及电子结构非常有用的工具。这篇综述介绍了用STM/STS分析了4H(6H)-SiC的各种表面重构及其电子结构,旨在促进表面科学和碳化硅生长以及器件的发展和进步。

Semiconductor silicon carbide(SiC)is a promising material for high temperature,high frequency,and high power electron devices because of its wide band gap,high thermal conductivity,and high mobility.The performance of SiC devices can be affected by the quality of surfaces and interfaces.After annealing at high temperature,the surface reconstructions and morphologies of SiC can be changed,leading to different surface structures contact with metals or other materials.Therefore,the SiC devices will be affected by surface reconstructions and morphologies.Scanning tunneling microscopy/spectroscopy(STM/STS)is an extremely useful tool for getting the topographic information of reconstructed structures in real space and their electronic structures on surfaces.In this review,we introduce various surface reconstructions of 4H(6H)-SiC as well as their electronic structures which are analyzed by STM/STS,aiming to promote the development and progress of surface science and SiC devices.