摘要
In this paper,high-uniformity 2×64 silicon avalanche photodiode[APD]arrays are reported.Silicon multiple epitaxy technology was used,and the high performance APD arrays based on double-layer epiwafers are achieved for the first time,to the best of our knowledge.A high-uniformity breakdown voltage with a fluctuation of smaller than 3.5 V is obtained for the fabricated APD arrays.The dark currents are below 90 pA for all 128 pixels at unity gain voltage.The pixels in the APD arrays show a gain factor of larger than 300 and a peak responsivity of 0.53 A/W@M=1 at 850 nm[corresponding to maximum external quantum efficiency of 81%]at room temperature.Quick optical pulse response time was measured,and a corresponding cutoff frequency up to 100 MHz was obtained.
作者
王天财
曹澎
彭红玲
徐传旺
宋海智
郑婉华
Tiancai Wang;Peng Cao;Hongling Peng;Chuanwang Xu;Haizhi Song;Wanhua Zheng(Laboratory of Solid-State Optoelectronics Information Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Electronic and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Southwest Institute of Technology Physics,Chengdu 610041,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Weifang Academy of Advanced Opto-electronic Circuits,Weifang 261021,China)
基金
supported by the National Science and Technology Major Project(No.2018YFE0200900)。
