平面双栅型离子栅晶体管的逻辑功能研究

Study on logic function of coplanar dual-gate ion-gated transistors

离子栅晶体管作为一种新型半导体器件,因其低电压、可多栅调控的特点以及在化学传感和类脑器件方面的运用而备受关注。由于离子栅具有侧向长程调控的能力,十分有利于制备成平面双栅的结构,进一步利用两个栅极输入对离子与沟道内电子耦合情况的调控,可以实现独特的逻辑输出。为了更好地实现该功能,采用射频磁控溅射制备了铟镓锌氧(IGZO)沟道和铟锌氧(IZO)电极,以聚电解质材料——聚苯乙烯磺酸钠(PSSNa)作为离子栅介质制备了平面双栅型离子栅晶体管。在测量其晶体管基本电学特性的基础上,通过对双栅调控机制的研究,首先实现了与逻辑(AND)的输出,再利用负载电阻后反相器的非门(NOT)作用,将两者结合,形成与非逻辑(NAND)输出,从而证明离子栅晶体管在平面双栅结构下仅需简单的器件和电路就能实现多种基本逻辑功能。

In recent years,as a new type of device,ion-gated transistors have attracted much attention because of their characteristics of low voltage,multi-gate regulation and unique applications in the chemical sensing and brain-like devices.Since the ion-gate has the ability of lateral and long-range regulation,it is favorable to be fabricated into the coplanar dualgate structure.Furthermore,the unique logic function can be realized by using the two gate inputs to control the ion and channel electron coupling.In this paper,indium gallium zinc-oxygen(IGZO)channel and indium zinc-oxygen(IZO)electrode was prepared by RF magnetron sputtering.And they were used to prepare the coplanar dual-gate ion-gated transistor with polyelectrolyte material,sodium polystyrene sulfonate(PSSNa)as the ion-gated dielectric.On the basic electrical characteristics of the transistor was measured,the dual-gate regulation mechanism was addressed and the output of AND logic was realized.Then the AND logic and NOT gate action of the inverter after loading the resistor were combined to form the NAND logic output.It is proved that the ion-gated transistor with the coplanar dual-gate structure can realize many basic logic functions only with simple devices and circuits.