Two-dimensional complementary gate-programmable PN junctions for reconfigurable rectifier circuit

The unique features of ambipolar two-dimensional materials open up a great opportunity to build gate-programmable devices for reconfigurable circuit applications,e.g.,PN junctions for rectifier circuits.However,current-reported rectifier circuits usually consist of one gate-programmable PN junction as the rectifier and one resistor as the load,which are not conductive to voltage output and large-scale integration.Here we propose an approach of complementary gate-programmable PN junctions to assemble reconfigurable rectifier circuit,which include two symmetric back-to-back black phosphorus(BP)/hexagonal boron nitride(h-BN)/graphene heterostructured semi-gate field-effect transistors(FETs)and perform complementary NP and PN junction like complementary metal-oxide-semiconductor(CMOS)circuit.The investigation exhibits that the circuit can effectively reconfigure the circuit with/without rectifying ability,and can process alternating current(AC)signals with the frequency prior 1 KHz and reconfiguration speed up to 25μs.We also achieve the reconfigurable rectifier circuit memory via complementary semi-floating gate FETs configuration.The complementary configuration here should be of low output impedance and low static power consumption,being beneficial for effective voltage output and large-scale integration.