导电银浆添加用纳米晶/非晶复合铜锆银粉的惰性气体冷凝法制备

Preparation of Composite Conductive Silver Paste with Nanocrystalline/Amor⁃phous Composite Copper-Zirconium Silver Powder by Inert Gas Condensation Method

导电银浆是一种重要的电子材料,可以提高电子器件的连接和传输效率,广泛应用于太阳能和电子工业领域。目前导电银浆的制作流程繁琐,通常使用纳米银等成本较高的填料以保证良好的导电性。本研究采用惰性气体冷凝(inert gas condensation, IGC)法制备了纳米晶/非晶复合铜锆银(Cu-Zr-Ag)粉,通过X射线衍射(XRD)、场发射扫描电镜(FESEM)、透射电镜(TEM)等方式对其微观结构和形貌进行了表征,并将其作为导电填料制备了导电银浆,测量了含有不同复合Cu-Zr-Ag粉添加量的导电银浆高温烧结后样品的导电性。结果表明:通过IGC法制备的纳米晶/非晶复合Cu-Zr-Ag粉尺寸分布均匀,平均尺寸约为35 nm;纳米晶/非晶复合Cu-Zr-Ag粉添加量为0.5%~1.5%的导电银浆导电性得到优化,其中,纳米粉的添加量为1%时,方阻最低,达到5.63 mΩ/□。

Conductive silver paste is an important electronic material that can improve the connection and transmission efficiency of electronic devices and is widely used in the solar and electronics industry.Currently,the production process of conductive silver paste is cumbersome and expensive due to the use of high-cost materials such as nanosilver to ensure good conductivity.In this study,nanocrystalline/amorphous hybrid copper zirconium silver(Cu-Zr-Ag)powder was prepared by inert gas condensation(IGC)method with laser evaporation.The microstructure and morphology of nanocrystalline/amorphous hybrid Cu-Zr-Ag powder were characterized by X-ray diffraction(XRD),field emission scanning electron microscopy(FESEM)and transmission electron microscopy(TEM),etc.Nanocrystalline/amorphous hybrid Cu-Zr-Ag powder was then used as a conductive filler to prepare the high-conductive silver paste,and the conductivity of silver paste after high-temperature sintering with different amounts of nanocrystalline/amorphous hybrid Cu-Zr-Ag powder was measured.The experimental results showed that n nanocrystalline/amorphous hybrid Cu-Zr-Ag powder prepared by IGC method had uniform particle size,with an average size of approximately 35 nm.The conductivity was optimal when the additional amount of nanocrystalline/amorphous hybrid Cu-Zr-Ag powder to the conductive silver paste was 0.5%~1.5%.With 1%nanocrystalline/amorphous hybrid Cu-Zr-Ag powder addition,the sheet resistance after sintering could be as low as 5.63 mΩ/□.