Recent progress of photodetector based on carbon nanotube film and application in optoelectronic integration

Due to its remarkable electrical and optical capabilities,optoelectronic devices based on the semiconducting single-walled carbon nanotube(s-SWCNT)have been studied extensively in the last two decades.First,s-SWCNT is a direct bandgap semiconductor with a high infrared absorption coefficient and high electron/hole mobility.In addition,as a typical one-dimensional material,there is no lattice mismatch between s-SWCNT and any substrates.Another advantage is that the optoelectronic devices of s-SWCNT can be processed at low temperatures.s-SWCNT has intriguing potential and applications in solar cells,light-emitting diodes(LEDs),photodetectors,and three-dimensional(3D)optoelectronic integration.In recent years,along with the advancement of solution purification technology,the high-purity s-SWCNTs film has laid the foundation for constructing large-area,homogenous,and high-performance optoelectronic devices.In this review,optoelectronic devices based on s-SWCNTs film and related topics are reviewed,including the preparation of high purity s-SWCNTs film,the progress of photodetectors based on the s-SWCNTs film,and challenges of s-SWCNTs film photodetectors.