摘要
InP solar cell is promising for space application due to its strong space radiation resistance and high power conversion efficient(PCE).Graphene/InP heterostructure solar cell is expected to have a higher PCE because strong near-infrared light can also be absorbed and converted additionally by graphene in this heterostructure.However,a low PCE was reported experimentally for Graphene/InP heterostructures.In this paper,electronic properties of graphene/InP heterostructures are calculated using density functional theory to understand the origin of the low PCE and propose possible improving ways.Our calculation results reveal that graphene contact with InP form a p-type Schottky heterostructure with a low Schottky barrier height(SBH).It is the low SBH that leads to the low PCE of graphene/InP heterostructure solar cells.A new heterostructure,graphene/insulating layer/InP solar cells,is proposed to raise SBH and PCE.Moreover,we also find that the opened bandgap of graphene and SBH in graphene/InP heterostructures can be tuned by exerting an electric field,which is useful for photodetector of graphene/InP heterostructures.
基金
This work was supported by the National Natural Science Foundation of China(Grant Nos.12074441,11774438,and 12104518)
Guangdong Basic and Applied Basic Foundation in China(Grant No.2019A1515011572 and 2022A1515012643).
