一种W波段八倍频放大芯片的设计

Design of A W-Band Octave Amplifier Chip

介绍了基于砷化镓(GaAs)伪形态高电子迁移率晶体管(pseudo-morphology High Electron Mobility Transistor,pHEMT)工艺,输出信号为W波段的八倍频放大芯片的设计方法。通过合理划分电路方案,将倍频器方案设计为输入频率经过四倍频器在Q波段进行放大,最后通过二倍频输出W波段信号。基于上述方案,设计了一款输入频率为10.8~11.5 GHz、输出频率为86.4~92 GHz的八倍频多功能芯片。芯片通过探针台在片测试,在工作频带内七次谐波抑制均优于15 dBc,九次谐波抑制均优于20 dBc,输出功率大于0 dBm。

This paper introduces the design method of an octave amplifier chip with W-band output signal based on the pseudo-morphology High Electron Mobility Transistor(pHEMT)technology of GaAs.By reasonably dividing the circuit scheme,the frequency multiplier scheme is designed such that the input frequency is amplified in Q-band by quadrupler,and finally the W-band signal is output by frequency doubling.Based on the above scheme,an octave multifunctional chip with input frequency of 10.8~11.5 GHz and output frequency of 86.4~92 GHz is designed.The chip passed the probe station on-chip test,and the seventh harmonic suppression is better than 15 dBc,the ninth harmonic suppression is better than 20 dBc,and the output power is greater than 0 dBm.