制备条件对ScYSZ薄膜形貌的影响及其生长模型

Effects of preparation conditions on morphology and growth model of ScYSZ thin films

采用溶液旋涂法在石英基体上制备了氧化钇氧化钪共稳定氧化锆(ScYSZ)阻挡层薄膜,对前驱体的热分解过程进行了分析,并研究了基体温度和热处理温度对薄膜形貌的影响,在此基础上揭示了前驱体溶液结晶形核生长的过程。结果表明:前驱体在580℃完全分解。不同温度基体上薄膜的表面形貌表明,降低基体温度有利于晶体形核生长。薄膜经不同温度热处理后的表面形貌显示,热处理促进晶体生长与再结晶。在氧化钆掺杂氧化铈(GDC)电解质基体上制备了致密的ScYSZ薄膜,证实了晶体形核生长的规律。

In this paper,a yttrium oxide scandium oxide co-stabilized zirconia(ScYSZ) barrier film was prepared on a quartz substrate by solution spin coating.The thermal decomposition process of the precursor was analyzed,and the effects of the substrate temperature and heat treatment temperature on the film morphology were studied.On this basis,the process of crystal nucleation and growth of the precursor solution was revealed.The results show that the precursor is completely decomposed at 580 ℃.The surface morphologies of the films on the substrates at different temperatures show that reducing the substrate temperature is beneficial to the crystal nucleation growth.The surface morphologies of the films after heat treatment at different temperatures show that the heat treatment promotes crystal growth and recrystallization.Dense ScYSZ films were fabricated on a gadolinium oxide-doped ceria(GDC)electrolyte matrix,which confirmed the regularity of crystal nucleation growth.