碳化硅材料性能优异,应用迎来发展良机

Silicon carbide material has excellent performance and ushers in a good opportunity for development in the application field

碳化硅作为第三代半导体材料的代表,有禁带宽度大、击穿电场高、热导率高、电子饱和速率高、抗辐射能力强等特点,由其制成的半导体器件在高温、高压、高频大功率的环境下具备良好的性能表现,被广泛应用于汽车、工业与能源、5G建设等领域。本文介绍了碳化硅产业链及其应用领域和发展前景。

As a representative of the third generation of silicon carbide List of semiconductor materials,silicon carbide is characterized by wide band gap,high breakdown electric field,high thermal conductivity,high electron saturation rate and strong radiation resistance,the semiconductor devices made by SiC have good performance in high temperature,high pressure,high frequency and high power environment,and are widely used in the fields of automobile,industry and energy,5G construction and so on.In this paper,silicon carbide industry chain and its application fields and development prospects are introduced.