基于光滑有限元法的屏蔽微带线静电场研究

Study of the Electrostatic Field of Shielded Microstrip Lines Based on the Smoothed Finite Element Method

传统有限元方法(FEM)在预测屏蔽微带线横截面电势时存在效率低、精度差的缺陷,针对这种情况,构造了一种屏蔽微带线电势模拟的光滑有限元(S-FEM)数值模型。基于三角形背景网格的边、节点构建光滑域,依托梯度光滑技术(GST)对电势梯度进行光滑处理,最后根据光滑Galerkin弱形式得到系统离散方程。应用构造方法对屏蔽单微带线、屏蔽耦合微带线静电场进行了模拟,结果表明:相比FEM,S-FEM能有效提升计算效率与精度,在屏蔽微带线的设计研究中具有一定应用价值。

The traditional finite element method(FEM)has the defects of low efficiency and poor accuracy in predicting the potential of shielded microstrip lines section.In view of this,a smoothed finite element method(S-FEM)numerical model for simulating the potential of shielded microstrip lines is constructed.Based on the edges and nodes of the triangular elements,a series of smoothing domain are further formed,the electric potential gradient is smoothed by the gradient smoothing technique.Finally,the discrete equation of the sys-tem is obtained according to the smoothed Galerkin weakform.The electrostatic field of shielded single microstrip lines and shielded coupled microstrip lines is analyzed by the proposed method.The results show that compared with FEM,S-FEM can effectively improve the computational efficiency and accuracy,and has certain application value in the design and research of shielded microstrip lines.