阈值可控型三值忆阻仿真器的设计与实现

Design and implementation of ternary memristor simulator with controllable threshold

忆阻器具有尺寸小、速度快、功耗低等优势,在数字逻辑、数据存储、人工智能等领域具有广泛应用。多值忆阻器的多阻值状态能够提高信息密度、处理更多信号、减小芯片面积、降低电路复杂度,具有非常好的发展前景和研究价值。该文以三值逻辑为例,对多值忆阻器进行了研究,提出了三值忆阻器数学模型,设计了三值忆阻仿真器电路结构。实验结果表明,该设计具有阈值可控功能,软件仿真结果与理论分析一致。硬件电路实验也验证了设计的正确性,为多值忆阻逻辑电路的研究提供了新的思路和方法。

Because of their advantages of small size,high speed and low power consumption,memristors have found their applications in a broad spectrum of fields including digital logic,data storage,and artificial intelligence.The multi-resistance state of the multiple-valued memristor can improve the information density,process more signals,reduce chip areas,and optimize circuit complexity,which together presents a promising prospect and indicates enormous research value.In this paper,with ternary logic as an example,the multiple-valued memristor is studied,the mathematical model of the ternary memristor is proposed,and the circuit structure of the ternary memristor simulator is designed.Experimental results demonstrate that the realized design has the threshold-controllable function;the simulation results are consistent with the theoretical analysis.The hardware circuit experiment also has substantiated the correctness of its design,and therefore has provided a new approach and methodology for the research of multiple-valued memristor logic circuits.