激光辅助水射流加工砷化镓晶片微槽的实验研究

An Experimental Investigation of Laser Assisted Waterjet Microgrooving of GaAs Wafers

对干激光、低压水射流辅助激光和激光辅助水射流技术加工砷化镓晶片微槽进行了对比实验,结果表明,激光辅助水射流技术适合加工砷化镓材料,它能够加工出晶片表面无污染、大深度、小热影响区宽度、大深宽比的高质量微槽,加工表面微观形貌均匀、微裂纹少,优于其他两种加工方式。实验研究了激光辅助水射流加工砷化镓晶片微槽的切割性能,结果表明,加工参数(激光脉冲能量、水射流压力、加工速度、水射流倾斜角度、焦平面位置和加工次数)对微槽深度、微槽宽度和材料去除率具有显著影响。微槽深度、微槽宽度和材料去除率随着激光脉冲能量的增大而增大,随着水射流压力的增大而减小,材料去除率随着加工速度的增大而显著增大。

Comparative experiments of dry laser,low-pressure waterjet assisted laser and laser assisted waterjet processing microgrooves of GaAs wafers were conducted.The results show that laser assisted waterjet processing is suitable for processing GaAs materials,which may process high quality microgrooves without contamination on the wafer surfaces,large depth,small heat affected zone width and large depth to width ratio.And the micromorphologies of the machined surfaces are uniform with few microcracks,which are better than the other two methods.The cutting performance of laser assisted waterjet microgrooving of GaAs wafers was studied experimentally.The results show that the processing factors(laser pulse energy,waterjet pressure,processing speed,waterjet inclination angle,focal plane position,and processing times)have significant influences on microgroove depth,microgroove width and material removal rate.The microgroove depth,microgroove width and material removal rate increase with increasing laser pulse energy,decrease with increasing waterjet pressure,and the material removal rate increases significantly with increasing processing speed.