大面积单层二硫化钼的制备及其光电性能

Preparation and photoelectric property of large scale monolayer MoS_(2)

过渡金属硫族化合物(TMDCs)材料具有优异的电学和光电性能,在下一代光电子器件中具有广阔的应用前景.然而,大面积均匀生长单层的TMDCs仍然具有相当大的挑战.本工作提出了一种简单而有效的利用化学气相沉积(CVD)制备大面积单层二硫化钼(MoS_(2))的方法,并通过调整氧化物前驱体的比例,调整MoS_(2)单晶/薄膜生长.随后,利用叉指电极掩膜板制备出单层MoS_(2)薄膜光电探测器.最后,在405 nm激光激发下,不同电压和不同激光功率条件下均表现出高稳定和可重复的光电响应,响应时间可达毫秒(ms)量级.此外,该光电探测器实现了405—830 nm的可见光到近红外的宽光谱检测范围,光响应度(R)高达291.7 mA/W,光探测率(D*)最高达1.629×10^(9)Jones.基于该CVD制备的单层MoS_(2)薄膜光电探测器具有成本低、能大规模制备,且在可见光到近红外的宽光谱范围内具有良好的稳定性和重复性的优点,为未来电子和光电子器件的应用提供了更多的可能性.

Transition metal dichalcogenide(TMDC)monolayers exhibit enhanced electrical and optoelectrical properties,which are promising for next-generation optoelectronic devices.However,large-scale and uniform growth of TMDC monolayers with large grain size is still a considerable challenge.Presented in this work is a simple and effective approach to fabricating largescale molybdenum(MoS_(2))disulfide monolayers by chemical vapor deposition(CVD)method.It is found that MoS_(2)grows from single crystal into thin film with the increase of oxide precursor proportion.The photodetector of large scale monolayer layer MoS_(2)film is fabricated by depositing metal electrodes on the interdigital electrode mask through using thermal evaporation coating.Finally,the highly stable and repeatable photoelectric responses under the conditions of different voltages and different laser power are characterized under 405-nm laser excitation,with response time decreasing down to the order of milliseconds(ms).In addition,the photodetector achieves a wide spectral detection range from 405 nm to 830 nm,that is,from visible light to near-infrared light wavelength range,with optical response(R)of 291.7 mA/W and optical detection rate(D*)of 1.629×10^(9)Jones.The monolayer MoS_(2)thin film photodetector demonstrated here has the advantages of low cost,feasibility of large-scale preparation,and good stability and repeatability in the wide spectrum range from visible light to near infrared light wavelength,providing the possibilities for future applications of electronic and optoelectronic devices.