摘要
针对太赫兹通信及成像等系统对高集成度射频收发链路的需求,在自主研制的太赫兹肖特基二极管的基础上,建立了器件的精确模型,设计并制备出基于二极管的倍频/混频单片集成芯片,解决了传统二极管装配难度大、一致性差的难题,提高了器件的性能。成功研制出170 GHz、340 GHz倍频器和340 GHz混频器模块,并且开发出集成化的340 GHz发射与接收链路。发射端一体化模块实现了342 GHz功率为22 mW的输出,接收端一体化模块实现了330~350 GHz单边带变频损耗在10 dB上下。该模块的开发为未来太赫兹通信及成像技术的应用奠定基础。
In order to meet the demand of highly integrated RF transceiver link in terahertz communication and imaging systems,a precise model of the device is established on the basis of the self-developed terahertz Schottky diode,and then a frequency doubling/mixing monolithic integrated chip based on diode is designed and fabricated,which solves the problems of difficult assembly and poor consistency of traditional diode,and improves the performance of the device.The 170 GHz,340 GHz frequency multiplier and 340 GHz mixer modules are successfully developed,and then the integrated 340 GHz transmitting and receiving links are further developed.The integrated module of the transmitter realizes the output of 342 GHz with a power of 22 mW,and the integrated module of the receiving end realizes a frequency conversion loss of 10 dB up or down at 330-350 GHz single sideband.The development of the module lays the foundation for the future application of terahertz communication and imaging technology.
作者
张明浩
董亚洲
梁士雄
ZHANG Minghao;DONG Yazhou;LIANG Shixiong(Hebei Academy of Product Quality Supervision and Inspection,Shijiazhuang 050000,China;University of Electronic Science and Technology of China,Chengdu 610000,China;National Key Laboratory of ASIC,The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050000,China)
出处
《量子电子学报》
CAS
CSCD
北大核心
2023年第3期369-375,共7页
Chinese Journal of Quantum Electronics
基金
国家重点研发计划(2018YFB1801503)
中央高校经费(ZYGX2020ZB011)。
关键词
半导体器件
太赫兹肖特基二极管
倍频器
混频器
收发链路
semiconductor device
terahertz Schottky diode
frequency multiplier
mixer
transceiver link
