高成品率和平整度的GaN基Micro LED芯片激光剥离工艺的研究

Laser Lift-Off Process of GaN-Based Micro LED Chip with High Yield and Flatness

使用波长248 nm的准分子激光器实现了GaN基微型发光二极管(Micro LED)的大面积激光剥离(LLO)。分离器件所需要的临界激光能量密度为800~835 mJ·cm^(-2),分离的器件完好无损,分离表面光滑,残余应力为0.0714 GPa,均方根粗糙度仅为0.597 nm,远低于目前报道的LLO方法分离表面。该研究为实现高质量、高效率的GaN基Micro LED芯片的制备提供了一种有前景的思路,对柔性GaN基器件的制备具有一定意义。

In this study,a large area laser lift-off(LLO)of GaN-based micro light-emitting diodes(Micro LED)was achieved using an excimer laser at 248 nm.The critical laser energy density required for separation of devices is 800~835 mJ·cm^(-2).The separated device is intact with a residual stress of 0.0714 GPa and a mean square roughness of 0.597 nm,which is much lower than that of the LLO method reported so far.This study provides a promising idea for the fabrication of GaN-based Micro LED chips with high quality and high efficiency,which is of great significance for the fabrication of flexible GaN-based devices.