摘要
This article will briefly describe a Majorana platform made of InAs/GaSb(including InAs/(In)GaSb)semiconductor-superconductor heterostructures.A unique advantage of this platform is that the quantum spin Hall edge state realized in inverted InAs/GaSb is a topologically protected spinless single mode,and can be tuned by front-back dual gates.Similar to a number of other platforms the proximity effect of a conventional s-wave superconductor on the helical edge has been proposed to realize Majorana bound state.We will present an introduction to this platform with a focus on the materials and devices aspects and those points that are particularly illustrative.
基金
supported by the National Key Research and Development Program of China(Grant No.2019YFA0308400)
the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB28000000)。