混合介质层类同轴硅通孔等效电路模型的建立与验证

Establishment and Verification of Equivalent Circuit Model for Coaxially-Shielded TSV with Mixed Dielectric Layer

混合介质层类同轴硅通孔(coaxially-shielded through-silicon-via with mixed dielectric layer,MD CSTSV)结构由于其电学性能优良、制备工艺简单和成本低廉的特点,在高密度射频封装领域中具有极大的应用前景.本文基于多导体传输线理论和引入比例因子λ的环形介质层的复电容的计算公式,提取了该结构的单位长度RLGC电学参数,并建立了相应的等效电路模型.在0.1~40 GHz的频率范围内,利用MD CSTSV的等效电路模型仿真计算得到的S参数结果与基于HFSS全波仿真得到的S参数结果之间匹配良好,最大误差不超过7%.相关结果表明,所提取的MD CSTSV的单位长度RLGC电学参数以及相应的等效电路模型较为准确且可以很好地模拟其信号传输性能.

Coaxially-shielded through-silicon-via with mixed dielectric layer(MD CSTSV)has showed great application prospect in the field of high density RF packaging due to its excellent electrical properties,simple fabrication process and low cost.In this paper,an equivalent circuit model of MD CSTSV was established based on the theory of multi-conductor transmission line and the calculation formulas for complex capacitance of annular dielectric layer with introduced scale factorλ,obtaining RLGC electrical parameters of the structure per unit length.The results show that in the frequency range of 0.1~40 GHz,the S-parameter results calculated through the equivalent circuit model of MD CSTSV are consistent well with those obtained from HFSS full wave simulation,presenting less than 7%maximum error.All the results show that the extracted per unit length RLGC electrical parameters of MD CSTSV and the corresponding equivalent circuit model can be used to accurately simulate the signal transmission performance of MD CSTSV.