摘要
Better electrical insulation and thermal management are both urgently required in integrated power semiconductors.Electrical insulation epoxy encapsulation suffers from poor heat conduction,which has increasingly become a bottleneck of power semiconductors integration.Although incorporating high thermal conductivity ceramics,such as hexagonal boron nitride(hBN),aluminium nitride etc.into epoxy promotes the thermal conductivity,the eco-friendly scalable fabrication of these composites with sufficient electrical breakdown strength remains a formidable challenge.Suitable voltage stabilizers are known to provide additional benefits to breakdown strength.Herein,a highthroughput approach combining plasma with roll-to-roll was developed.The voltage stabilizer(acetophenone)was grafted on interfaces between hBN and epoxy matrix through plasma.The high-energy electrons are consumed by the grafted interface,which leads to the significant suppression of partial discharge in Epoxy/hBN.Meanwhile,interfacial phonon scattering is repaired by grafting.Therefore,the epoxy composite concurrently exhibits improved breakdown strength(by 27.4%)and thermal conductivity(by 142.9%)at about 11.9 wt.%filler content,outperforming the pure epoxy.Consequently,a promising modification strategy for mass production is provided for the encapsulation materials in various high-power-density semiconductor devices.
基金
National Natural Science Foundation of China,Grant/Award Number:52277135
Fund of the Key Laboratory of High Power Microwave Technology,Grant/Award Number:6142605190105
Graduate Research and Innovation Foundation of Chongqing,Grant/Award Number:CYB22016。