摘要
Solution-processed organic‒inorganic halide perovskite(OIHP)single crystals(SCs)have demonstrated great potential in ionizing radiation detection due to their outstanding charge transport properties and low-cost preparation.However,the energy resolution(ER)and stability of OIHP detectors still lag far behind those of melt-grown inorganic perovskite and commercial CdZnTe counterparts due to the absence of detector-grade high-quality OIHP SCs.Here,we reveal that the crystallinity and uniformity of OIHP SCs are drastically improved by relieving interfacial stress with a facial gel-confined solution growth strategy,thus enabling the direct preparation of large-area detector-grade SC wafers up to 4 cm with drastically suppressed electronic and ionic defects.The resultant radiation detectors show both a small dark current below 1 nA and excellent baseline stability of 4.0×10^(-8) nA cm^(-1) s^(-1) V^(-1),which are rarely realized in OIHP detectors.Consequently,a record high ER of 4.9% at 59.5 keV is achieved under a standard 241Am gamma-ray source with an ultralow operating bias of 5 V,representing the best gamma-ray spectroscopy performance among all solution-processed semiconductor radiation detectors ever reported.
基金
supported by the National Natural Science Foundation of China(No.22179050,No.21875089,No.62075191,No.52003235,and No.61721005)
the China Postdoctoral Science Foundation(No.2022T150251)
the Zhejiang Provincial Natural Science Foundation of China(No.LR22F040003)
the Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering(No.2022SZFR003)
the Fundamental Research Funds for the Central Universities(226-2022-00200).