碳化硅功率器件技术发展综述

A Review of Silicon Carbide Power Device Technology Development

第三代半导体SiC因禁带宽、热导率高等优异性能得到广泛关注,SiC功率器件也成为学术界和工业界的研究热点。从SiC材料性质出发,归纳分析了SiC薄膜与SiC功率器件制备工艺,回顾了SiC MOSFET和IGBT器件的发展,讨论了SiC MOSFET和IGBT器件的结构设计优化和性能评估,最后指出SiC器件面临的挑战及发展趋势。

The third-generation semiconductor SiC has attracted widespread attention due to its excellent properties such as wide bandgap and high thermal conductivity.SiC power devices have also become a research hotspot in academia and industry.Starting from the properties of SiC materials,this article summarizes and analyzes the preparation processes of SiC thin films and SiC power devices,reviews the development of SiC MOSFETs and IGBT devices,discusses the structural design optimization and performance evaluation of SiC MOSFETs and IGBT devices,and finally summarizes and looks forward to SiC device challenges and development trends.