EBR返溅影响因素

Factors Influencing EBR Splashback

半导体污染控制是芯片生产工业面对的首要挑战之一,特征尺寸越来越小,就需要晶圆上多层光刻胶叠加涂覆。在表面张力与晶圆旋转的双重作用下,留在晶圆边缘的光刻胶在旋涂结束后,晶圆的边缘正反两面都会有光刻胶的堆积。晶圆边缘光刻胶涂布不均匀,使得边缘图形变差,还容易发生光刻胶剥离,从而影响其他区域的图形,所以晶圆边缘多余的光刻胶需要去除。因此,边缘光刻胶的去除(EBR,Edge Bead Removal)方法应运而生。基于工艺实验,研究了关于EBR返溅的影响因素,从而找到最优的EBR工艺条件。

Semiconductor contamination control is one of the primary challenges faced by the chip manufacturing industry.Smaller and smaller feature sizes require multiple layers of photoresist overlays to be coated on the wafer.Under the dual action of surface tension and wafer rotation,the photoresist left on the wafer edges accumulates on both the front and back sides of the wafer edges at the end of spin coating.The uneven coating of photoresist on the wafer edge makes the edge pattern poor,and it is also easy for the photoresist to peel off,thus affecting the pattern of other areas,so the excess photoresist on the edge of the wafer needs to be removed.Therefore,the Edge Bead Removal(EBR)method has been developed.The aim of this paper is to find the optimal EBR process conditions by investigating the influencing factors regarding EBR re-sputtering through several sets of process experiments.