6英寸8 kA/6.5 kV IGCT器件特性研究

Study of Characteristics of 6-inch 8 kA/6.5 kV IGCT Device

集成门极换流晶闸管(IGCT)具有电压等级高、电流关断能力大和通态损耗低等优势,在电网领域的应用越来越广泛。为了进一步提升器件的关断能力,IGCT器件尺寸扩展至6英寸,在此介绍了6英寸8 kA/6.5 kV非对称IGCT器件的研制,通过优化阴极梳条排布和管壳设计,将IGCT元件寄生电感降到2 nH以下,降低了40%。通过优化N基区的选型,器件具备了稳健的4 kV直流阻断能力和8 kA的关断能力,并在高温8 kA下通态电压低于2.8 V,最后在直流断路器拓扑中进行了应用,这为研究更大功率等级的IGCT器件奠定了基础。

The integrated gate commutator thyristor(IGCT)has the advantages of high rated voltage,high current turnoff ability and low on-state loss.It has been widely used in the field of power grid.In order to further improve the shut-off capability of the device,the IGCT device size is extended to 6-inch.The development of a 6-inch 8 kA/6.5 kV asymmetric IGCT device is described.By optimizing the cathode segment layout and case design,the parasitic inductance of the IGCT element is reduced to below 2 nH by 40%.By optimizing the selection of N-base region,the device has robust 4 kV direct current blocking capability and 8 kA turn-off capability,and the on-state voltage is lower than 2.8 V at high temperature of 8 kA.Finally,the device is applied in the direct current circuit breaker topology.This lays a solid foundation for developing IGCT devices with higher power level.