具有晶格缺陷的La掺杂CeO_(2)/nano-G阳极催化剂高效降解诺氟沙星研究

La-doped CeO_(2)/nano-G with desired lattice defects as anode catalyst for effective electrocatalytic degradation of norfloxacin

在电催化剂中,通过元素掺杂策略引入缺陷可能显著提高材料的催化活性和稳定性。通过La掺杂(1~5 at.%)来提高CeO_(2)/nano-G的电化学反应活性,并加快界面电荷转移。掺入La的CeO_(2)/nano-G电极,析氧电位达到2.57 V,表现出比原始CeO_(2)/nano-G电极更稳定的电催化活性。此外,La-CeO_(2)/nano-G电极还被证明可以在电氧化过程中有效地矿化诺氟沙星(NOR),3 at.%的La-掺杂量可使降解效率高达98.2%。XPS结果表明,La掺杂后CeO_(2)表面的氧空位数量增加,可能是La-CeO_(2)/nano-G电极的电化学反应活性和稳定性增强的原因。这些结果可为设计具有高电催化活性和稳定性的CeO_(2)/nano-G电极提供了缺陷工程策略方面的启示。

Catalytic activity and stability of the materials can be improved by increasing the lattice defect of catalysts by way of elemental doping.Herein,a new electrocatalytic activity of CeO_(2)/nano-G was fabricated by La doping(1~5 at.%),which enriches the active sites and increases degree of ceria lattice defects.The La-doped CeO_(2)/nano-G electrode with an oxygen evolution potential of 2.57 V(vs.RHE),showed a more stable electrocatalytic activity than the pristine CeO_(2)/nano-G electrode.In addition,the La-CeO_(2)/nano-G electrode with a La-doped 3 at.%achieves up to 98.2%removal of norfloxacin during the anodic oxidation process.XPS results show that the increased number of oxygen vacancies on the CeO_(2)surface after La-doping is mainly responsible for the enhanced electrochemical reactivity and stability of the La-CeO_(2)/nano-G electrode.The results provide insight into defect engineering strategies for designing CeO_(2)/nano-G electrodes with high electrocatalytic activity and stability.