摘要
根据大功率速调管的设计要求阴极的电流密度不低于14 A/cm^(2),目前这种类型速调管所用M阴极工作温度需要不低于1080℃,所需灯丝功率高达26~28 W。本文介绍一种适用于该类型速调管的改良氧化物阴极的制备技术,这种阴极采用镍合金活性基底代替纯镍基底,涂层采用含钪四元氧化物。结果显示:这种氧化物阴极速调管支取电流密度为15 A/cm^(2)时,阴极温度为910℃,灯丝功率为20.97 W,灯丝功率比M型阴极降低了约20%。
According to the design requirements of a high-power klystron,the current density of the cathode should not be less than 14 A/cm^(2).Currently,the operating temperature of the M-type cathode for the klystron is higher than 1080℃,and the required filament power is up to 26~28 W.A preparation technology for an improved oxide cathode suitable for the klystron is introduced.The cathode has a nickel alloy active substrate instead of pure nickel,and has a scandium containing quaternary oxide coating.The experimental results show that when the current density of the oxide cathode is 15 A/cm^(2),the cathode temperature is 910℃,and the filament power is 20.97 W,which is about 20%lower than that of the M-type cathode.
作者
张敏
张珂
任海岩
宋莹
周军
刘继琛
ZHANG Min;ZHANG Ke;REN Hai-yan;SONG Ying;ZHOU Jun;LIU Ji-chen(Beijing Vacuum Electronics Research Institute,Beijing 100015,China)
出处
《真空电子技术》
2023年第3期70-72,77,共4页
Vacuum Electronics