激光辅助水射流微铣削单晶β-Ga_(2)O_(3)衬底的实验研究

Experimental Study of Laser Assisted Water Jet Micromilling of Single Crystalβ-Ga_(2)O_(3) Substrates

氧化镓(β-Ga_(2)O_(3))是一种新型高性能半导体材料,由于其易解理、高脆性、导热性差和各向异性等特点,在传统的精密加工和激光加工过程中易产生微裂纹,这极大地制约了氧化镓单晶的应用。激光辅助水射流加工集成了激光加工效率高、精度高以及水射流加工不产生热损伤的优势,能实现硬脆材料的近无热损伤加工,在半导体晶圆加工领域具有良好的应用前景。对激光辅助水射流微铣削单晶β-Ga_(2)O_(3)衬底进行了全因素实验研究,结果表明,工艺参数对微槽深度和微槽底部表面粗糙度具有显著影响,通过工艺参数优化,激光辅助水射流加工能获得低表面损伤、底部平整且表面粗糙度低(Ra<1μm)的微槽。

Gallium oxide(β-Ga_(2)O_(3))was a new type of high performance semiconductor material.Due to the characteristics of easy cleavage,high brittleness,poor thermal conductivity and anisotropy,the micro cracks would be easily generated in traditional precision machining and laser machining,which greatly restricted the applications of gallium oxide single crystal.Laser-assisted water jet machining might combine the advantages of high efficiency and high precision of laser machining and no thermal damages of water jet machining,which might realize the near thermal damage free machining of hard and brittle materials,thus a good application prospect was obtained in the field of semiconductor wafer processing.All-factor experimental study of laser assisted water jet micro-milling of single crystalβ-Ga_(2)O_(3) substrates was carried out herein.Results show that the processing parameters have significant influences on the depth and the surface roughness of the bottom of the micro-groove.By optimizing the processing parameters,the micro-groove with low surface damage,flat bottom and low surface roughness(Ra<1μm)may be obtained by the laser assisted water jet machining.