具有大电导动态范围和多级电导态的铁电Hf_(0.5)Zr_(0.5)O_(2)栅控突触晶体管

Ferroelectric Hf_(0.5)Zr_(0.5)O_(2)-gated synaptic transistors with large conductance dynamic range and multilevel states

得益于铁电材料的非易失性和快速擦写,铁电突触晶体管(FST)在神经形态计算应用中很有前景.然而,在低能耗下同时实现大电导动态范围(G_(max)/G_(min))和多级有效电导态仍是一个挑战.在此,本文首次提出了由铁电Hf_(0.5)Zr_(0.5)O_(2)(HZO)栅介质结合溶液处理的氧化铟(In_(2)O_(3))突触晶体管以解决上述问题.通过精细调控的铁电相以及对铁电体和铁电/半导体界面的电荷注入良好抑制,实现了优异的突触特性.在每个尖峰事件490 fJ的低能耗下,该FST成功模拟了高达101个有效电导状态的长时程增强/抑制(LTP/D),且具有大电导动态范围(G_(max)/G_(min)=32.2)和优异耐久性(>1000个循环).此外,模拟实现了96.5%的手写数字识别准确率,这是现有报道的FST的最高记录.这项工作为开发低成本、高性能和节能的铁电突触晶体管提供了一条新途径.

Benefiting from the nonvolatile and fast programming operations of ferroelectric materials,ferroelectric synaptic transistors(FSTs)are promising in neuromorphic computing.However,it is challenging to realize conductance with a large dynamic range(G_(max)/G_(min))and multilevel states simultaneously under low energy consumption.Here,solution-processed indium oxide(In_(2)O_(3))synaptic transistors gated by ferroelectric Hf_(0.5)Zr_(0.5)O_(2)(HZO)are proposed for the first time to address the above problems.Excellent synaptic characteristics were realized through the delicately regulated ferroelectric phase and good inhibition of charge injection in ferroelectric bulk and ferroelectric/semiconductor interface.Long-term potentiation/depression(LTP/D)up to 101 effective conductance states and excellent endurance(1000 cycles)with large G_(max)/G_(min)=32.2 were successfully mimicked under a low energy consumption of 490 fJ per spike event.Besides,the simulation achieved 96.5%recognition accuracy of handwriting digit,which is the highest record for existing FSTs.This work provides a new pathway for developing low-cost,high-performance,and energy-efficient FSTs.