摘要
Benefiting from good electrostatics,excellent combinations with high-j oxide dielectrics,and high device densities,Si fin field-effect transistor(FinFET)arrays are the dominant structures of current complementary metal oxide semiconductor technology.However,when Si FinFETs are extremely small,their performance deteriorates significantly due to enhanced interfacial scattering arising from thickness fluctuations and dangling bonds.In fact,the Si carrier mobility degrades drastically with the thickness:l/t 6(where l is the mobility and t is the thickness of the semiconductor)[1].Two-dimensional(2D)materials,such as graphene,transition metal dichalcogenides(TMDs),black phosphorus,and Bi2O_(2)Se,have emerged as promising building blocks for nextgeneration FETs.They exhibit excellent electrostatics due to their atomic scale thicknesses and high carrier mobilities(up to 103 cm^(2) V1 s1)from their smooth surfaces without dangling bonds[2].
作者
屈贺如歌
李秋卉
杨星月
吕劲
Ruge Quhe;Qiuhui Li;Xingyue Yang;Jing Lu(State Key Laboratory of Information Photonics and Optical Communications and School of Science,Beijing University of Posts and Telecommunications,Beijing 100876,China;State Key Laboratory for Mesoscopic Physics and School of Physics,Peking University,Beijing 100871,China;Collaborative Innovation Center of Quantum Matter,Beijing 100871,China;Beijing Key Laboratory for Magnetoelectric Materials and Devices(BKL-MEMD),Peking University,Beijing 100871,China;Key Laboratory for the Physics and Chemistry of Nanodevices,Peking University,Beijing 100871,China;Peking University Yangtze Delta Institute of Optoelectronics,Nantong 226010,China)
基金
supported by the Ministry of Science and Technology of China(2022YFA1203904)
the National Natural Science Foundation of China(12274002)
the Fundamental Research Funds for the Central Universities,China
the Fund of State Key Laboratory of Information Photonics and Optical Communications(Beijing University of Posts and Telecommunications).
