摘要
As the emerging member of zero-dimension transition metal dichalcogenide,WSe2 quantum dots(QDs)have been applied to memristors and exhibited better resistance switching characteristics and miniaturization size.However,low power consumption and high reliability are still challenges for WSe_(2) QDs-based memristors as synaptic devices.
出处
《Research》
SCIE
EI
CSCD
2023年第2期101-113,共13页
研究（英文）
基金
This work was financially supported by the National Natural Science Foundation of China(No.62104058)
the Natural Science Foundation of Hebei Province(No.F2021201022)
the Science and Technology Project of Hebei Education Department(No.QN2020178)
the Advanced Talents Incubation Program of the Hebei University(No.521000981363)
This work was also supported by the National Key R&D Plan“Nano Frontier”Key Special Project(No.2021YFA1200502)
Cultivation Projects of National Major R&D Project(No.92164109)
National Natural Science Foundation of China(Nos.61874158 and 62004056)
Special Project of Strategic Leading Science and Technology of Chinese Academy of Sciences(No.XDB44000000-7)
HebeiBasic Research Special KeyProject(No.F2021201045)
the Support Program for the Top Young Talents of Hebei Province(No.70280011807)
the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province(No.SLRC2019018)
Outstanding Young Scientific Research and Innovation Team of Hebei University(No.605020521001)
Special Support Funds for National High Level Talents(No.041500120001)
High-level Talent Research Startup Project of Hebei University(No.521000981426)
the Science and Technology Project of Hebei Education Department(No.QN2021026)
the Advanced Talents Incubation Program of the Hebei University(No.521000981426)
the Natural Science Foundation of Hebei Province(No.F2021201009).
