InSb焦平面芯片的响应率提升研究

Research on the Response Rate Improvement of InSb Focal Plane Chips

InSb光伏探测器的响应率是评价探测器性能的重要指标之一。探测器的电压信号与响应率成正比。从光敏芯片的角度提出了增大InSb红外探测器信号的方法。通过实验设计,优化了台面湿法刻蚀的方法,减小了芯片p型层的厚度。优化台面刻蚀方法使台面面积增加,InSb芯片的I-V电流增大了40%,组件的电压信号值提升了16%。进一步将InSb芯片的p型层厚度减小至0.8~1.2μm后,InSb芯片的I-V电流增大了67.3%,单元组件的电压信号值提升了40.2%。基于InSb光敏芯片光生载流子的产生到光电流的转换过程,分析了台面湿法刻蚀以及p型层的厚度对信号的影响机理。该研究对于提升InSb探测器信号和优化探测器性能具有重要的指导意义。

The response rate of InSb photovoltaic detector is one of the important indicators to evaluate the performance of the detector.The voltage signal of the detector is proportional to the response rate.A method for increasing the signal of InSb infrared detector was proposed from the perspective of photosensitive chips.Through the experimental design,the wet etching method was optimized and the thickness of the p-type layer was reduced.The optimized etching method increased the pixel area,the I-V current of InSb chip increased by 40%,and the voltage signal value of the module increased by 16%.After further reducing the p-layer thickness of the chip to 0.8-1.2 m,the I-V current of InSb chip increased by 67.3%,and the voltage signal value of the unit module increased by 40.2%.Based on the conversion process from the generation of carriers to the photocurrent of InSb chip,the mechanism of wet etching on the pixel and the influence of the thickness of the p-type layer on the signal was analyzed.This research has important guiding significance for improving InSb infrared detector signals and optimizing detector performance.