K波段GaN大功率开关芯片的设计与实现

Design and Implementation of K Band GaN High Power Switch Chip

为分析氮化镓(Gallium Nitride,GaN)开关芯片的功率压缩机理,基于0.15μm GaN pHEMT工艺技术,采用了有效的电路拓扑,设计并实现了一款可应用于K波段的GaN大功率开关芯片。测试结果表明,该大功率开关芯片在18~22 GHz的频率范围,0.1 dB输入压缩的功率点可达到连续波12 W,开关插损1.1 dB,隔离度32 dB。控制电压为0 V和-28 V这2个互补电平,芯片尺寸为1.90 mm×1.50 mm×0.08 mm,满足实际工程应用的需求。

In order to analyze the power compression mechanism of Gallium Nitride(GaN)switching chips,based on 0.15μm GaN pHEMT technology and an effective circuit topology,a GaN high-power switching chip applicable to K band was designed and implemented.The test results show that in the frequency range of 18~22 GHz,the power point of 0.1 dB input compression can reach 12 W continuous wave,the switch insertion loss is 1.1 dB and the isolation degree is 32 dB.The control voltage is two complementary levels of 0 V and-28 V,and the chip size is 1.90 mm×1.50 mm×0.08 mm,which can meet the requirements of practical engineering applications.