5G毫米波GaN收发前端芯片研究

Research of the 5th-Generation Millimeter Wave GaN Transceiver Front-end MMIC

收发前端芯片是5G混合波束赋形系统架构中的关键器件之一,其关键指标包括发射通路的高效率与接收通路的低噪声。研制了一款采用GaN集成工艺的Ka波段收发前端MMIC,采用谐波匹配技术提高发射通路的效率,通过接收电路拓扑的正确选择及前级匹配网络的优化设计降低接收通路的噪声系数。测试结果表明,芯片在37~40 GHz频率范围内发射通路饱和输出功率大于36 dBm,饱和效率大于26%,功率回退8 dB时三阶交调失真小于-33 dBc;接收通路增益大于19 dB,噪声系数小于3.6 dB。该收发前端芯片可应用于5G毫米波基站中。

The transceiver front-end chip is a key component in the 5G hybrid beam forming sys-tem,high efficiency and low noise are the key indicators of transceiver front-end chip.A Ka-band front end MMIC with GaN integrated technology was developed in this paper.Harmonic matching technolo-gy was used to improve the efficiency of transmiting path.The noise figure of the receiving circuit was reduced by correctly selecting the topology of the receiving circuit and optimizing the design of the pre-matching network.The test results show that in 37-40 GHz,the saturation power of the transmission path is greater than 36 dBm,the saturation efficiency is greater than 26%,the third-order intermodula-tion distortion(IMD3)is less than-33 dBc at 8 dB output power back-off.The gain and noise figure of the receiver are greater than 19 dB and less than 3.6 dB,respectively.The transceiver front-end chip can be applied to 5G millimeter wave base station.