浮栅晶体管的辐照响应及退火特性研究

Research on Irradiation Response and Annealing Characteristics of Floating Gate Transistors

对浮栅晶体管进行了^(60)Co-γ射线总剂量辐照试验,研究了浮栅晶体管的电离辐射响应特性,通过对晶体管在辐照后的常温和高温100℃下的退火,分析了电离辐射环境下浮栅晶体管的陷阱电荷的产生及变化过程,监测了浮栅电荷存储能力。结果表明,辐照导致浮栅晶体管中多晶硅浮动栅极存储电荷的丢失,界面处感生的陷阱电荷数量远少于氧化物陷阱电荷及浮栅中电荷丢失量,退火效应可恢复浮栅受辐射影响的存储能力。试验数据为浮栅晶体管在电离辐射环境的测试及应用提供参考。

The ionizing radiation response characteristics of floating gate transistors were studied by the^(60)Co-γrays.Through the annealing characteristics of ionizing radiation response parameters at room temperature and high temperature of 100℃after irradiation,the trap charge generation rate and variation process of floating gate transistors under ionizing radiation environment were analyzed.The charge storage capacity of the floating gate was monitored.The results showed that the irradiation can lead to a floating gate transistor main polysilicon floating grid storage charge loss,voltage separation of trap charge after statistical induced at the interface trap charge quantity is far less than the oxide trap charge and charge loss quantity in the floating gate,annealing effect can restore the storage capacity of floating gate affected by radiation.The experimental data provide reference for the test and application of the device in ionizing radiation environment.