摘要
A vertical GaN field-effect transistor with an integrated self-adapted channel diode(CD-FET)is proposed to improve the reverse conduction performance.It features a channel diode(CD)formed between a trench source on the insulator and a P-type barrier layer(PBL),together with a P-shield layer under the trench gate.At forward conduction,the CD is pinched off due to depletion effects caused by both the PBL and the metal-insulator-semiconductor structure from the trench source,without influencing the on-state characteristic of the CD-FET.At reverse conduction,the depletion region narrows and thus the CD turns on to achieve a very low turn-on voltage(V_(F)),preventing the inherent body diode from turning on.Meanwhile,the PBL and P-shield layer can modulate the electric field distribution to improve the off-state breakdown voltage(BV).Moreover,the P-shield not only shields the gate from a high electric field but also transforms part of C_(GD)to CGS so as to significantly reduce the gate charge(Q_(GD)),leading to a low switching loss(E_(switch)).Consequently,the proposed CD-FET achieves a low V_(F)of 1.65 V and a high BV of 1446 V,and V_(F),Q_(GD)and E_(switch)of the CD-FET are decreased by 49%,55%and 80%,respectively,compared with those of a conventional metal-oxide-semiconductor field-effect transistor(MOSFET).
作者
邓思宇
廖德尊
魏杰
张成
孙涛
罗小蓉
Siyu Deng;Dezun Liao;Jie Wei;Cheng Zhang;Tao Sun;Xiaorong Luo(University of Electronic Science and Technology of China,Chengdu 611731,China)
基金
Project supported by the National Natural Science Foundation of China(Grant Nos.61874149 and U20A20208)
the Outstanding Youth Science and Technology Foundation of China(Grant No.2018-JCJQ-ZQ-060).