碳化硅MOSFET并联技术研究

Design of Rectifier Control SystemBased on the Combination of NCD and Optimized Function

碳化硅功率器件具有更高的开关频率和耐压特性,为了提高碳化硅功率驱动的过流能力,同时降低引线电感,设计一个由4个碳化硅金属氧化物半导体场效应晶体管(Metal-Oxide-Semiconductor Field-Effect Transistor,MOSFET)并联的驱动模块。详细介绍了栅驱动器原理、印制电路板(Printed Circuit Board,PCB)布局以及静态和动态均流性能波形,通过分析验证了电阻等器件参数的差异对均流的影响。

Silicon carbide power devices have higher switching frequency and withstand voltage characteristics.In order to improve the over-current capability of silicon carbide power driving and reduce the lead inductance,a driving module composed of four silicon carbide Metal-Oxide-Semiconductor Field-Effect Transistors(MOSFET)in parallel is designed.The principle of gate driver,Printed Circuit Board(PCB)layout and static and dynamic current sharing performance waveforms are introduced in detail,and the influence of device parameters such as resistors on current sharing is verified through analysis.