GaN与Si器件在DC/DC变换器中的性能分析

Performance Analysis of GaN and Si Devices in DC/DC Converter

第三代半导体材料氮化镓(GaN)以其禁带宽度、电子饱和迁移速度以及工作温度等先天优势,在高频、高功率、高温条件的应用中得到了快速发展。通过分析GaN和Si功率器件参数,设计了GaN和Si功率器件性能对比实验。实验结果表明,在48 V输入的DC/DC变换器应用中,GaN变换器在效率、体积、功率密度方面均有明显优势。

Gallium nitride(GaN),the third-generation semiconductor material,has been rapidly developed in high frequency,high power and high temperature applications due to its inherent advantages such as band gap,electron saturation migration speed and operating temperature.Design a performance comparison experiment between GaN and Si power device by analyzing their parameters.The experimental results show that in the application of 48V input DC/DC converter,GaN converter has high advantages in efficiency,volume,and power density.