摘要
受新能源汽车、5G通信、光伏和储能等应用需求带动,以及在全球科技博弈加剧的背景下,近年来宽禁带半导体受到全球各国政府与产业界的高度重视和广泛关注,已成为全球经济增长潜力巨大的战略性产业。应该看到,氧化镓相比碳化硅、氮化镓具有更宽的禁带宽度(约4.9eV禁带宽度),以及具有8 MV/cm的理论临界击穿场强,是一种新兴的超宽禁带半导体材料,可用于制备功率器件、微波射频器件以及日盲紫外探测器等半导体器件,在高压电力控制、射频通信和火焰探测等领域具有重大应用价值,已成为国际科技战略必争高地。本文研究了全球氧化镓产业发展现状,剖析了产业发展面临的机遇和挑战,并提出了对我国发展氧化镓产业的几点启示。
Driven by the demand for new energy vehicles,5G communications,photovoltaics,energy storage and other applications,and against the background of the intensification of the global science and technology game,wide band gap semiconductors have been highly valued and widely concerned by governments and industry around the world in recent years,and have become a strategic industry with great potential for global economic growth.It should be noted that compared with silicon carbide and gallium nitride,Gallium(III)oxide has a wider band gap(about 4.9eV band gap),and a theoretical critical breakdown field strength of 8 MV/cm.It is a new ultra wide band gap semiconductor material,which can be used to prepare power devices,microwave RF devices,solar blind UV detectors and other semiconductor devices,and has significant application value in high-voltage power control,RF communication,flame detection and other fields,It has become a strategic highland for international science and technology.This paper studies the development status of global Gallium(III)oxide industry,analyzes the opportunities and challenges faced by the industrial development,and puts forward some enlightenment for the development of Gallium(III)oxide industry in China.
作者
麻尧斌
石健
赵聪鹏
葛婕
MA Yao-bin;SHI Jian;ZHAO Cong-peng;GE Jie(China Center for Information Industry Development)
出处
《中国集成电路》
2023年第7期12-16,共5页
China lntegrated Circuit
关键词
氧化镓
宽禁带半导体
功率器件
晶体管
gallium oxide
wide band-gap semiconductor
power device
transistor