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一种L波段的高精度低附加相移的2位MMIC数控衰减器

A L band 2-bit MMIC Digital Controlled Attenuator With High Accuracy And Low Insertion Loss
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摘要 本文设计了一种集成了电平转换驱动电路的DC~2GHz的高精度低附加相移的2位MMIC数控衰减器。分析了两种传统的开关型的T型和∏型衰减器的拓扑结构[1],通过对传统T型和∏型衰减器架构的改进,实现在DC~2GHz的高精度低附加相移的2位MMIC数控衰减器。该基于GaAs工艺的2位数控衰减器,芯片版图面积为1.38mm^(2),仿真结果表明,该衰减器在DC~2GHz频段范围内的插入损耗为0.93dB,30dB的绝对衰减误差<0.28dB,32dB的绝对衰减误差<0.23dB,3态的回波损耗均小于18.8dB,30dB的衰减附加相移为0度,32dB衰减附加相移小于0.34度,电平转换驱动电路可实现输出一对41uV、4.99V电平。 This paper presents a DC~2GHz 2-bit MMIC digital controlled attenuator with a level shift with high accuracy and low insertion loss.Analyzed the topological structures of two traditional switched T-type and∏_-type topologies,with the improvement of the attenuator architectures,we get a s a DC~2GHz 2-bit MMIC digital controlled attenuator with a level shift with high accuracy and low insertion loss.The 2-bit digital controlled attenuator is implemented in GaAs technology and occupies a core chip area of only 1.38 mm^(2).The simulation results show that the insertion loss of the reference state is 0.93 dB from DC to 2GHz,The amplitude error of 30dB is less than 0.28dB,The amplitude error of 32dB is less than 0.23dB,the return loss is better than 18.8 dB for all the 3 states.The phase error of 30dB is 0°,the phase error of 32dB is less than 0.335°,the level shift can provide a pair of 41uV and 4.99V.
作者 王楠 杨格亮 陈超 WANG Nan;YANG Ge-liang;CHEN Chao(The 54th Research Institute of CETC;National Engineering Research Center of Communication Software and ASIC Design)
出处 《中国集成电路》 2023年第7期53-56,71,共5页 China lntegrated Circuit
关键词 衰减器 相控阵 GAAS 高精度 低附加相移 电平转换 attenuator phased array system GaAs high-precision low insertion loss level shift
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