期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

一种高PSRR的无运放带隙基准电路 被引量：1

A High PSRR Bandgap Reference Circuit Without Op-amp
下载PDF
导出
摘要 设计了一种无运放带隙基准电路,该电路采用电压自调节技术来稳定输出基准电压,并实现该带隙基准电路在较宽频率范围内的高PSRR。该基准采用无运放结构,在降低电路复杂性的同时,避免了运算放大器的失调电压对输出基准的温度系数的影响。基于0.18μm BCD工艺,在Cadence环境下仿真得到该电路在10 Hz时,PSRR为-94 dB,在1 MHz时,PSRR为-44 dB;在-40~125℃温度范围内,温度系数为4×10^(-6)/℃;包含启动电路在内,该电路静态电流约为14μA,片上面积约为0.016 mm^(2)。 A kind of bandgap reference circuit without operational amplifier was designed.By using the voltage self-adjusting technology to stabilize output reference voltage,the PSRR of the proposed bandgap reference circuit was raised.At the same time,due to without the operational amplifier,the circuit avoided the effect for output voltage caused by op-amp offset voltage,which improved the temperature coefficient of the reference,and reduced the complexity of the circuit.Based on a O.18μm BCD process,the PSRR of the circuit is-94 dB at 10 Hz and-44 dB at 1 MHz by simulation under Cadence environment.And the temperature coefficient is 4×10^(-6)/℃in the temperature range of-40-+125℃.Including the start-up circuit,the static current of the bandgap reference circuit is about 14μA,and the on-chip area is about 0.016 mm^(2).
作者 曹麒 罗萍 刘凡 杨秉中 冯冠儒 杨健 CAO Qi;LUO Ping;LIU Fan;YANG Bingzhong;FENG Guanru;YANG Jian(State Key Lab,of Elec.Thin Films and Integr.Dev.,Univ.of Elec.Sci.and Technol.of China,Chengdu 6i0054,P.R.China;Chongqing Institute Microelectronics Industry Technology,Univ.of Elec.Sci.and Technol.of China,Chongqing 401331,P.R.China;The 24th Research Institute of China Electronics Technology Group Corporation,Chongqing 400060,P.R.China)
机构地区 电子科技大学电子薄膜与集成器件国家重点实验室 电子科技大学重庆微电子产业技术研究院 中国电子科技集团公司第二十四研究所
出处 《微电子学》 CAS 北大核心 2023年第2期227-232,共6页 Microelectronics
关键词 带隙基准 电源抑制比 无运放 电压自调节 bandgap reference power supply rejection ratio without op-amp voltage self-regulation
分类号 TN433 [电子电信—微电子学与固体电子学]
  • 相关文献

参考文献2

二级参考文献21

  • 1GRAY P R, HURST P, MEYER R G, et al. Analysis and Design of Analog Integrated Circuits[M]. New Jersey, USA. Wiley, 1990: 201-300.
  • 2ZHU Y, LIU F, YANG Y, etal. A -115 dB PSRR CMOS bandgap reference with a novel voltage self-regulating tech- nique[C]. 2014 IEEE Proceedings of the Custom Integrated Circuits Conference (CICC), San Jose, CA, USA, 2014: 1-4. doi: 10.1109/CICC.2014.6946006.
  • 3BASYURT P B and AKSIN D Y. A compact curvature corrected bandgap reference in 0.35m CMOS process[J]. Analog Integrated Circuits and Signal Processing, 2015, 83(1): 65-73. doi: 10.1007/s10470-015-0503-5.
  • 4WANG B, LAW M K, and BERMAK A. A precision CMOS voltage reference exploiting silicon bandgap narrowing effect [J]. IEEE Transactions on Electron Devices, 2015, 62(7): 2128-2135. doi: 10.1109/TED.2015.2434495.
  • 5CHAHARDORI M, ATARODI M, and SHARIFKHANI M. A sub 1V high PSRR CMOS bandgap voltage reference[J]. Microeleetronics Journal, 2011, 42(9): 1057-1065. doi: 10.1016/j.mejo.2011.06.010.
  • 6CAI C, SONG S X, LUO Y, etal. A high accuracy low-power bandgap voltage reference with trimming[C]. 2014 12th IEEE International Conference on Solid-State and Integrated Cir- cuit Technology (ICSICT), Guilin, China. 2014: 1-4. doi: 10.1109/ICSICT.2014.7021565.
  • 7LAM Y H and KI W H. CMOS bandgap references with self- biased symmetrically matched current-voltage mirror and extension of sub-l-V design[J]. IEEE Transactions on Very Large Scale Integration (VLS1) Systems, 2010, 18(6): 857-865 doi: 10.1109/TVLSI.2009.2016204.
  • 8COLOMBO D M, WIRTH G, and BAMPI S. Sub-1 V band-gap based and MOS threshold-voltnge based voltage references in 0.13 m CMOS[J]. Analog Integrated Circuits and Signal Processing, 2015, 82(1): 25-37. doi: 10.1007/ s10470-014-0343-8.
  • 9LEUNG K N and MOK P K T. A CMOS voltage reference based on weighted Vos for CMOS low-dropout linear regu- lators[J]. IEEE Journal of Solid-State Circuits, 2003, 38(1): 146-150. doi: 10.1109/JSSC.2002.806265.
  • 10CAJUEIRO J P C. Tracking-Vgs: a temperature compensa- tion technique to implement all-MOS reference voltages[C].Proceedings of the 6th International Caribbean Conference on Devices, Circuits and Systems, Playa del Carmen, Mxico, 2006: 287-291. doi: 10.1109/ICCDCS.2006.250875.

共引文献5

同被引文献5

引证文献1

微电子学
2023年 第2期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部