一种新型双Fin ESD防护单元研究

Research on a Novel Double-Fin ESD Protection Unit

为满足小尺寸器件的ESD防护需求,基于Fin技术,提出了一种具有寄生SCR的STI双Fin结构。通过采用双Fin布局和深掺杂技术,减小了器件的基区宽度,避免了Fin技术中由弱电导调制导致的SCR无法开启的现象。仿真结果表明,相比于DFSD结构,新结构失效电流It2/Wlayout从21.67 mA/μm增加到28.33 mA/μm;触发电压V_(t1)从14.08 V减小到9.64 V。在ESD来临时,新结构能够实现有效的开启,泄放大电流。

In order to meet the ESD protection requirements of small size devices,a STI double-fin structure with parasitic SCR based on fin technology is proposed.By adopting double-fin layout and deep doping technology,the base region width of the device was reduced,which avoided the SCR failure caused by weak conductivity modulation in fin technology.The simulation results show that compared with DFSD structure,the I_(t2)/Wlayout of the new structure is increased from 21.67 mA/μm to 28.33 mA/μm,and the trigger voltage V_(t1) is decreased from 14.08 V to 9.64 V.The new structure can be turned on effectively and discharge large current under ESD stress.