激光诱发单粒子翻转的物理过程模拟

Physical Process Simulation of Laser-Induced Single Event Upsets

针对激光诱发的单粒子翻转过程开展模拟,提出了激光与半导体相互作用的双电子共振吸收模型,并在此基础上推导出吸收系数随温度变化的规律。该模型能自然得到激光与半导体作用的非线性吸收结果。利用热峰模型计算激光辐照器件后的温度演化行为,模拟了激光入射器件产生的单粒子翻转过程,得到了激光能量与等效LET的对应曲线,发现该曲线不是线性关系。该曲线是由激光在半导体中的非线性吸收导致的。除此之外还模拟了激光入射后产生的自由电荷总量与激光的特性参数(脉冲宽度)的依赖性关系。

In this paper,two electron resonance absorption models which can obtain nonlinear absorption results for laser-semiconductor interactions are introduced,and the change of material absorption coefficient with the temperature is deduced.Moreover,the thermal peak simulation is used to calculate the temperature evolution behavior after laser irradiation of the semiconductor device,and the single event upsets(SEU)process induced by laser incidence on the device is simulated.The non-linear relation between the laser energy and the equivalent LET is obtained which is caused by the nonlinear absorption of the laser in the semiconductor.In addition,the dependence of the total amount of free charge generated after laser incidence on the characteristic parameter of the laser,and the pulse width,is also simulated.