脉冲窄化型抗辐射静态存储器单元加固结构

A Radiation Hardened SRAM Cell Layout With Pulse Quenching

为减小单粒子电荷共享效应对纳米量级静态存储器单元的影响,提出了一种基于双互锁冗余加固(dual interlocked storage cell, DICE)静态随机存储器(static random access memory, SRAM)单元的新型布局结构。该结构融入了脉冲窄化技术,并与传统的DICE存储单元进行了比较,能有效减小面积开销,提升单元电路综合性能,且不需考虑敏感节点之间的间距。测试电路用65 nm体硅CMOS工艺进行流片,辐照实验在中国原子能科学研究院抗辐射技术应用创新中心进行。实验结果表明,新型SRAM存储单元结构单粒子翻转线性能量转移阈值为15 MeV·cm2·mg-1,能够满足低轨道航天产品的应用需求。

To reduce the impact of single particle charge sharing on nanoscale static random access memory(SRAM)cells,a new layout structure based on dual interlocked storage cell(DICE)SRAM cells is proposed.This structure incorporates pulse quenching technology on the basis of traditional DICE storage cells.It can effectively reduce area and improve the overall performance of unit circuits without considering the spacing among sensitive nodes.The test circuit is taped with 65 nm bulk silicon CMOS process,and the radiation experiment is carried out in Innovative Center of Radiation Hardening Applied Technology of China Institute of Atomic Energy.The experimental results show that the new SRAM storage unit structure has a liner energy transfer of the new radiation hardened flip-flop≥15 MeV·cm 2·mg-1,which can meet the application requirements of low orbit aerospace products.