基于TCAD的IGBT温度特性模拟研究

Temperature Characteristics Simulation of IGBT Based on TCAD

为测试绝缘栅双极型晶体管(insulated gate bipolar transistor, IGBT)在工作中的温度特性,利用基于有限元方法的TCAD,模拟仿真了IGBT在不同温度下的静态特性及开关特性,结合硅的热疲劳机理及IGBT损耗分析对IGBT的温度特性进行理论研究,并建立沟槽栅IGBT模型,将IGBT所处温度作为变量,调节设置IGBT工作温度,通过监测栅极电压、集电极电压及集电极电流等参数,得到IGBT在不同温度下的转移特性曲线、输出特性曲线、击穿特性曲线和开关特性曲线,验证与分析理论研究的合理性与准确性。研究结果表明,高温度对IGBT的正常工作具有十分显著的影响,过高的温度可能会导致IGBT出现提前开通、开关难以控制、损耗增大,甚至器件损坏的结论。该研究工作对提高大功率IGBT高温工作稳定性具有参考意义。

To test the temperature characteristics of an insulated gate bipolar transistor(IGBT)in operation,the static characteristics and the switching characteristics of IGBT at different temperatures are simulated based on the finite element method TCAD.Theoretical study is conducted on the temperature characteristics of IGBT based on the thermal fatigue mechanism of silicon and the loss analysis of IGBT.A grooved gate IGBT is established,and the working temperature of the IGBT is adjusted.By monitoring parameters such as grid voltage,collector voltage,and collector current,the transfer characteristic curve,the output characteristic curve,the breakdown characteristic curve,and the switch characteristic curve of changes of IGBT at different temperatures are obtained and analyzed.The rationality and accuracy of theoretical research are verified and analyzed.The results show that high temperature may lead to delayed opening of the IGBT,difficulty in controlling the switch,increased loss,and even device damage.The temperature simulation research and loss analysis have reference significance for improving the high temperature working stability of high power IGBT.