面向纳米像元显示的无载流子注入发光研究进展

Recent Progress in Non-Carrier-lnjection Luminescence for Nanopixel Light-Emitting Display

随着电致发光器件尺寸缩小至亚微米甚至纳米量级,尺寸效应、界面效应和工艺复杂度等因素导致高效率的载流子注入变得愈发困难,并且会引发一系列光、电问题。基于高频交变电场驱动的无载流子注入发光有望克服发光器件微缩化后面临的载流子注入困难问题,因而成为应用于纳米像元显示的潜在工作模式,引起广泛关注。聚焦国内外有关无载流子注入发光的最新研究情况,综述基于氮化镓多量子阱的无注入发光、基于胶体量子点的无注入发光、基于二维纳米材料的无注入发光理论研究,以及关键材料与器件方面的研究进展,以期为纳米发光技术的发展提供新思路。

With the reduction of pixel size to submicron or even nanometer scale,the size effect,interface effect,and process complexity would make the injection of carrier become more difficult and lead to a series of optical and electrical problems.The non-carrier-injection luminescence driven by high-frequency alternating electric field is expected to overcome the problems when devices are miniaturized.Therefore,it has become a potential working mode for NLED and has attracted wide attention.In this paper,the recent progress in noncarrier-injection luminescence technology,including the theoretical research,key materials and devices is provided.Especially,the applications of non-carrierinjection mode in gallium nitride multi-quantum wells,quantum dots,and 2D nanomaterials are presented.The non-carrier-injection luminescence mode provides a new idea for the development of nano-luminescence technology.