基底温度对射频磁控溅射PI基ITO薄膜的影响

Effect of Substrate Temperature on PI-Based ITO Films by RF Magnetron Sputtering

采用射频(RF)磁控溅射法在柔性耐高温聚酰亚胺(PI)薄膜上沉积了氧化铟锡(ITO)薄膜,研究了基底温度对ITO薄膜性能的影响。运用四探针测试仪研究了基底温度对ITO薄膜方块电阻及电阻率的影响,并用扫描电子显微镜(SEM)、X射线衍射仪(XRD)研究了基底温度对ITO薄膜表面形貌及结晶度的影响。采用X射线光电子能谱仪(XPS)、附着力测试仪分析电学性能最优的样品化学组成与附着力。研究结果表明,ITO薄膜方块电阻及电阻率随基底温度上升先下降后上升,在基底温度为250℃时,ITO薄膜方块电阻为14.1Ω/□,电阻率为1.9×10^(-4)Ω·cm,基膜附着力好,薄膜结晶度高,(222)晶面存在择优取向。

By radio frequency(RF)magnetron sputtering method,the indium tin oxide(ITO)films were deposited on flexible polyimide(PI)films with high temperature resistance,and the effect of the substrate temperature on the ITO films performances was studied.The influences of the substrate temperature on the square resistance and resistivity of the ITO films were studied by using a four probe tester,and the effects of the substrate temperature on the surface morphology and crystallinity of the ITO films were studied by using the scanning electron microscope(SEM)and X-ray diffractometer(XRD).The X-ray photoelectron spectroscope(XPS)and adhesion tester were used to analyze the chemical composition and adhesion of the samples with the optimal electrical performance.The research results show that the square resistance and resistivity of the ITO films decrease firstly and then increase with the increase of the substrate temperature.At a substrate temperature of 250℃,the square resistance of the ITO films is 14.1Ω/□and the resistivity is 1.9×10^(-4)Ω·cm.The adhesion of the substrate film is good,the crystallity of the film is high,and the(222)crystal surface has a preferred orientation.