期刊文献+

射频MEMS开关寿命测试系统的设计与实现

Design and implementation of RF MEMS switch life test system
下载PDF
导出
摘要 针对射频MEMS开关寿命测试成本昂贵,测试连线复杂,且随着射频MEMS开关的尺寸不断缩小,传统测试效率低、测试任务只能在实验室进行等问题,本文设计并实现了一种小型且集成化的射频MEMS开关测试系统,组建了具备信号发生、波形实时监测、寿命计算、数据记录和测试报告打印等功能的射频MEMS开关测试系统,并用该系统对某款射频MEMS开关进行了初步测试评价。结果表明该系统较好的完成了射频MEMS开关的开关电压、开关时间和冷、热寿命的测试,能够满足射频MEMS开关的测试要求,证明了该测试系统的实用性和测试工作的准确性。 For the radio frequency micro-electro-mechanical system(RF MEMS)switch life test,the cost is high,the test connection is complex,and with the size of the RF MEMS switch shrinking,the traditional test efficiency is low,and the test task can only be carried out in the laboratory.In this paper,a RF micro-electro-mechanical switch test system with functions of signal generation,real-time waveform monitoring,lifetime calculation,data recording and test report printing is set up,and a RF micro-electro-mechanical switch is tested and evaluated preliminarily with this system.The results show that the design has well completed the test of the switch voltage,switch time,cold life,and thermal life of the RF micro-electro-mechanical system switch,and can meet the test requirements of the RF microelectro-mechanical system switch,which proves the practicability of the test system and the accuracy of the test work.
作者 史泽民 高旭东 王耀利 吴倩楠 李孟委 Shi Zemin;Gao Xudong;Wang Yaoli;Wu Qiannan;Li Mengwei(School of Instrument and Electronics,North University of China,Taiyuan 030051,China;Academy for Advanced Interdisciplinary Research,North University of China,Taiyuan 030051,China;Center for Microsystem Integration,North University of China,Taiyuan 030051,China;School of Electrical and Control Engineering,North University of China,Taiyuan 030051,China)
出处 《电子测量技术》 北大核心 2023年第9期42-47,共6页 Electronic Measurement Technology
基金 装备发展部仪器型号项目资助。
关键词 射频MEMS开关 MEMS测试 小型化测试系统 开关寿命 冷寿命 热寿命 RF MEMS switch MEMS test miniaturized test system switch lifetime mechanical life power life
  • 相关文献

参考文献7

二级参考文献48

  • 1卢剑奇,赵拥军,党同心.虚拟仪器技术在雷达系统测试中的应用[J].仪器仪表学报,2005,26(z2):258-261. 被引量:4
  • 2高慧莹.全自动探针测试台之关键技术[J].电子工业专用设备,2005,34(7):52-55. 被引量:5
  • 3黄冰玉.微波和射频测试系统的标量测量误差[J].国外电子测量技术,1996,15(2):31-33. 被引量:1
  • 4[1]REMBE C, MULLER R S. Measurement system for full three-dimensional motion characterization of MEMS [J]. J Microelectromech Syst, 2002, 11: 479-488.
  • 5[2]Davis C Q, FREEMAN D M. Using a light microscope to measure motions with nanometer accuracy[J]. Optical Engineering, 1998, 37:1299-1304.
  • 6[3]GUO H, LAL A. Die-level characterization of silicon-nitride membrane/silicon structures using resonant ultrasonic spectroscopy [J]. J Microelectromech Syst, 2003,12:53-63.
  • 7[4]CHEN S, BAUGHN T V, YAO Z J, et al. A new in situ residual stress measurement method for a MEMS thin fixed-fixed beam structure [J]. J Microelectromech Syst, 2002,11:309-316.
  • 8[5]http://www.mdl.sandia.gov/micromachine/.
  • 9[6]http://www.etec-inc.com/.
  • 10[7]http://www.intersci.com.

共引文献25

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部