氧化铟锡纳米晶薄膜的制备及其电致变色性能

Preparation and electrochromic properties of indium tin oxide nanocrystal films

采用一锅法合成不同形貌、尺寸的氧化铟锡(ITO)纳米晶,并通过旋涂工艺制备ITO纳米晶薄膜,研究不同形貌、尺寸ITO纳米晶制备的薄膜的近红外光谱调控性能。结果表明:5次旋涂后,ITO纳米晶薄膜的可见光透过率为89.2%,电阻率为54Ω·cm。平均直径为(6.88±1.53)nm的均匀球形ITO纳米晶制备的薄膜表现出最优的近红外光谱调控能力,在施加±2.5 V电压后,其在2000 nm的光谱调制量为39.3%,光密度变化量为0.43。在电致变色前后,ITO纳米晶薄膜始终保持高可见光透过率。ITO纳米晶的电致变色是由于电子注入/脱出导致的局域表面等离子体共振(LSPR)频率和强度变化引起,其电致变色过程是通过电容充放电实现的。

Indium tin oxide(ITO)nanocrystals with different shapes and sizes were synthesized by one-pot method,and ITO nanocrystal films were prepared by spin-coating process.The near-infrared spectrum regulation properties of the films prepared by ITO nanocrystals with different morphologies and sizes were studied.The results show that the visible light transmittance of ITO nanocrystal film is 89.2%,and the resistivity is 54Ω·cm after 5 spin coatings.The films prepared by uniform spherical ITO nanocrystals with an average diameter of(6.88±1.53)nm exhibit the best near-infrared spectrum regulation ability.After applying a voltage of±2.5 V,the spectrum regulation at 2000 nm is 39.3%,and the optical density change is 0.43.The ITO nanocrystal film maintains high visible light transmittance before and after electrochromism.The electrochromism of ITO nanocrystals is caused by change of frequency and intensity of localized surface plasmon resonance(LSPR)caused by electron injection/extraction,and its electrochromic process is realized by capacitor charging and discharging.